1. Product Science and Structural Integrity
1.1 Crystal Chemistry and Bonding Characteristics
(Silicon Carbide Crucibles)
Silicon carbide (SiC) is a covalent ceramic composed of silicon and carbon atoms set up in a tetrahedral latticework, mainly in hexagonal (4H, 6H) or cubic (3C) polytypes, each displaying phenomenal atomic bond stamina.
The Si– C bond, with a bond energy of approximately 318 kJ/mol, is among the toughest in structural porcelains, giving exceptional thermal stability, hardness, and resistance to chemical attack.
This robust covalent network leads to a product with a melting factor surpassing 2700 ° C(sublimes), making it among one of the most refractory non-oxide ceramics available for high-temperature applications.
Unlike oxide porcelains such as alumina, SiC keeps mechanical stamina and creep resistance at temperatures over 1400 ° C, where many steels and standard porcelains start to soften or weaken.
Its low coefficient of thermal development (~ 4.0 × 10 ⁻⁶/ K) combined with high thermal conductivity (80– 120 W/(m · K)) enables fast thermal cycling without catastrophic cracking, a crucial characteristic for crucible performance.
These inherent residential or commercial properties come from the well balanced electronegativity and similar atomic sizes of silicon and carbon, which advertise an extremely stable and densely packed crystal structure.
1.2 Microstructure and Mechanical Durability
Silicon carbide crucibles are typically made from sintered or reaction-bonded SiC powders, with microstructure playing a definitive duty in longevity and thermal shock resistance.
Sintered SiC crucibles are produced through solid-state or liquid-phase sintering at temperatures over 2000 ° C, commonly with boron or carbon additives to improve densification and grain limit cohesion.
This procedure produces a completely thick, fine-grained framework with minimal porosity (
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