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What is Aluminum nitride?

wallpapers News 2021-12-02
Similar to various semiconductors, aluminum nitride has excellent thermal conductivity, high electrical insulation, and thermal expansion characteristics, making it the best material for sintered bodies.
Aluminum nitride is stable at high temperatures in an inert atmosphere and melts at a temperature of about 2200°C. In a vacuum, AlN decomposes at ~1800°C. In the air, surface oxidation will occur above 700°C. Even at room temperature, a surface oxide layer with a thickness of 5-10 nm has been detected. The oxide layer can protect the material at temperatures up to 1370°C. Above this temperature, bulk oxidation occurs. Aluminum nitride is stable in hydrogen and carbon dioxide atmospheres up to 980°C.
Aluminum nitride properties:
Aluminum nitride can be stabilized at 2200℃. The strength at room temperature is high and decreases slowly with the increase of temperature.
It has good thermal conductivity, low thermal expansion coefficient is a good heat shock material. It is an ideal crucible material for melting and casting pure iron, aluminum, or aluminum alloy. Aluminum nitride is also an electrical insulator with good dielectric properties. It is also a promising electrical component.
The aluminum nitride coating on gallium arsenide protects it from ion implantation during annealing. Aluminum nitride is also a catalyst for conversion from hexagonal boron nitride to cubic boron nitride.
Reacts slowly with water at room temperature. It can be synthesized from aluminum powder in ammonia or nitrogen atmosphere at 800~1000℃. The product is white to grayish-blue powder. Or by al2O3-C-N2 system reaction synthesis at 1600~1750℃, the product is gray powder. Or aluminum chloride and ammonia gas should be opposite. The coating can be synthesized from the AlCl3-NH3 system by vapor deposition.
Aluminum nitride applications:
The report says much of the current research is developing light-emitting diodes based on semiconductors (gallium nitride or aluminum alloy gallium nitride) that operate in ultraviolet light at wavelengths of 250 nanometers.
It was reported in May 2006 that an inefficient diode can emit light waves with a wavelength of 210 nm. The single al nitride crystal has an energy gap of 6.2eV measured by vacuum ultraviolet reflectance.  In theory, the energy gap allows some waves with wavelengths of about 200 nanometers to pass through. But in commercial practice, there are many difficulties to overcome. Aluminum nitride is used in optoelectronic engineering, including as an inducible layer in optical storage interfaces and electronic substrates, as a wafer carrier with high thermal conductivity, and for military applications. Because of the piezoelectric properties of al nitride, the extensional extension of al nitride crystals is also used in surface acoustic wave detectors. The detectors are placed on silicon wafers. There are very few places where these thin films can be reliably made. Aluminum nitride ceramics have high room temperature and high-temperature strength, small coefficient of expansion, good thermal conductivity, which can be used as high-temperature structural parts of the heat exchange equipment materials. Aluminum nitride ceramics can be used as a crucible and casting mold material for melting of Al, Cu, Ag, Pb, and other metals by its corrosion resistance of iron, aluminum, and other metals and alloys.
Aluminum nitride supplier
TRUNNANO (aka. Luoyang Tongrun Nano Technology Co. Ltd.) is a trusted global chemical material supplier & manufacturer with over 12 years of experience in providing super high-quality chemicals and Nanomaterials. Currently, our company has successfully developed a series of materials. Aluminum nitride produced by our company is of high purity and good quality. Send us an email or click on the needed products to send an inquiry.

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